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| Ordering number : ENN7362 30A02SS PNP Epitaxial Planar Silicon Transistor 30A02SS Low-Frequency General-Purpose Amplifier Applications Applications * Package Dimensions unit : mm 2159A [30A02SS] Top View 1.4 0.3 Low-frequency Amplifier, high-speed switching, small motor drive. Features * * Side View 0.1 * * Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=580m[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.25 3 0.8 0.3 1.4 1 0.45 0.2 2 Bottom View 0.07 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.6mm) Conditions Ratings --30 --30 --5 --600 --1.2 200 150 --55 to +150 0.07 2 1 Unit V V V mA A mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--200mA, IB=--10mA IC=--200mA, IB=--10mA Ratings min typ max --100 --100 200 520 4.7 --110 --0.9 --220 --1.2 500 MHz pF mV V Unit nA nA Marking : XM Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3003 TS IM TA-100698 No.7362-1/4 30A02SS Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--10A, IE=0 IC=--1mA, RBE= IE=--10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --30 --5 35 125 25 typ max Unit V V V ns ns ns Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 470F VCC= --12V RL + 220F VBE=5V IC=20IB1= --20IB2= --300mA -mA 40mA --700 IC -- VCE 0 --3 mA --2 5mA -- 20mA --800 IC -- VBE VCE= --2V --600 --15m A --700 Collector Current, IC -- mA Collector Current, IC -- mA --500 A --10m --7mA --5mA --50 --600 --500 --400 --300 --200 --100 --400 --1mA --200 --500A --100 0 0 IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05050 Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 IT05049 --1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC IC / IB=20 VCE= --2V 7 Ta=75C 25C --25C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 DC Current Gain, hFE 3 2 --100 7 5 3 2 100 7 5 3 --1.0 7 Ta= 5C 2 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05051 --10 --1.0 2 3 5 7 --10 2 5 --2 5C 3 Ta=7 5C 25C --25C --300 --3mA --2mA C 5 7 --100 2 3 Collector Current, IC -- mA Collector Current, IC -- mA 5 7--1000 IT05054 No.7362-2/4 30A02SS 3 2 VCE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 5 3 2 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 3 2 --1.0 7 5 3 2 Ta= --25C 25C --100 7 5 3 2 --10 --1.0 7 Ta= 5C 75C -- C 25 C 25 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 10 5 7--1000 IT05055 --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 1000 5 7--1000 IT05056 Cob -- VCB f=1MHz f T -- IC VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 Output Capacitance, Cob -- pF 7 5 5 3 3 2 2 0.1 --1.0 2 3 5 7 --10 2 3 5 IT05053 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector-to-Base Voltage, VCB -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 Ron -- IB IN Collector Current, IC -- mA 250 5 7--1000 IT05052 PC -- Ta f=1MHz 1k 1k IB OUT Collector Dissipation, PC -- mW 200 ON Resistance, Ron -- M ou nt ed on 150 ag las se po xy 100 bo ar d( 20 !3 50 0! 1.6 m m ) 160 0 2 3 5 7 --1.0 2 3 5 Base Current, IB -- mA --10 IT06403 7 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT05045 No.7362-3/4 30A02SS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.7362-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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